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a microchip technology company ?2011 silicon storage technology, inc. ds75033a 10/11 data sheet www.microchip.com features ? high gain: ? typically 29 db gain across 2.4?2.5 ghz over tempera- ture 0c to +85c ? high linear output power: ? >26 dbm p1db - please refer to ?absolute maximum stress ratings? on page 5 ? meets 802.11g ofdm acpr requirement up to 22 dbm ? ~2.5% added evm up to 19 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 22 dbm ? high power-added efficiency/low operating cur- rent for both 802.11g/b applications ? ~22%/220 ma @ p out = 22 dbm for 802.11g ? ~21%/230 ma @ p out = 22 dbm for 802.11b ? single-pin low i ref power-up/down control ?i ref <2 ma ? low idle current ? ~70 ma i cq ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +85c ? low shut-down current (< 0.1 a) ? excellent on-chip power detection ? <+/- 0.3db variation betw een 0c to +85c ? <+/- 0.4db variation with 2:1 vswr mismatch ? <+/- 0.3db variation ch1 through ch14 ? 20 db dynamic range on-chip power detection ? simple input/output matching ? packages available ? 16-contact vqfn ? 3mm x 3mm ? all non-pb (lead-free) devices are rohs compliant applications ? wlan (ieee 802.11g/b) ? home rf ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz high-power, high-gain power amplifier sst12lp07 the sst12lp07 is a versatile power amplifier based on the highly-reliable ingap/gaas hbt technology. easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 ghz frequency band, the sst12lp07 has excellent linearity, typically ~2.5% added evm at 19 dbm output power, while meeting 802.11g spectrum mask at 22 dbm. the sst12lp07 fea- tures easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact vqfn package. downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 2 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company product description the sst12lp07 is a versatile power amplifier based on the highly-reliable ingap/gaas hbt tech- nology. the sst12lp07 can be easily configured for high-power applications with good power-added effi- ciency while operating over the 2.4- 2.5 ghz frequency band. this device typically provides 29 db gain with 22% power-added efficiency @ p out = 22 dbm for 802.11g and 21% power-added effi- ciency @ p out = 22 dbm for 802.11b. the sst12lp07 has excellent linearity, typically ~2.5% added evm at 19 dbm output power which is essential for 54 mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dbm. the sst12lp07 can also be configured for high-efficiency operation, typically 17 dbm linear 54 mbps 802.11g output power at 85 ma total power consumption. high-efficiency operation is desir- able in embedded applications such as in hand-held units. the sst12lp07 also features easy board-level usage along with high-speed power-up/down con- trol through a single combined reference voltage pin. ultra-low reference current (total i ref ~2 ma) makes the sst12lp07 controllable by an on/off switching signal directly from the baseband chip. these features coupled with low operating current make the sst12lp07 ideal for the final stage power amplification in battery-powered 802.11g/b wlan transmitter applications. the sst12lp07 has an excellent on-chip, single-ended power detector, which features wide-range (~20 db) with db-wise linearization and high stability over temperature (< +/-0.3 db 0c to +85c), fre- quency (<+/-0.3 db across channels 1 through 14), and output load (<+/-0.4 db with 2:1 output vswr all phases). the excellent on-chip power detector provides a reliable solution to board-level power con- trol. the sst12lp07 is off ered in a 16-contact vqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 3 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company functional blocks figure 1: functional block diagram 2 56 8 16 vcc1 15 1 14 vccb nc 49 11 1210 13 vcc2 nc nc nc det ncrfout nc nc nc 3 rfin nc vref bias circuit 7 1321 b1.0 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 4 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company pin assignments figure 2: pin assignments for 16-contact vqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with sev- eral low inductance, low resistance vias nc 1 no connection unconnected pin rfin 2 i rf input, dc decoupled nc 3 no connection unconnected pin vref 4 i 1 st and 2 nd stage idle current control nc 5 no connection unconnected pin nc 6 no connection unconnected pin nc 7 no connection unconnected pin det 8 o on-chip power detector nc 9 no connection unconnected pin nc 10 no connection unconnected pin rfout 11 o rf output nc 12 no connection unconnected pin vcc2 13 power supply pwr power supply, 2 nd stage vccb 14 power supply pwr power supply, bias circuit nc 15 no connection unconnected pin vcc1 16 power supply pwr power supply, 1 st stage t1.0 75033 56 8 16 vcc1 15 14 vccb nc 9 11 1210 13 vcc2 nc nc nc det ncrfout nc nc 2 14 3 nc rfin nc vref 7 1321 p1.0 top view (contacts facing down) rf and dc gnd 0 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 5 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 3 for the dc voltage and current specifications. refer to figures 3 through 11 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) input power to pin 2 (p in )..................................................... +5dbm average output power (p out ) 1 ................................................ +26dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. supply voltage at pins 13, 14, and 16 (v cc )................................. -0.3v to +4.0v reference voltage to pin 4 (v ref )......................................... -0.3v to +3.3v dc supply current (i cc )...................................................... 400ma operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature ........................... 260c for 10 seconds table 2: operating range range ambient temp v dd industrial -40c to +85c 3.3v t2.1 75033 table 3: dc electrical characteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 13, 14, 16 3.0 3.3 3.6 v i cc supply current for 802.11g, 22 dbm 220 ma for 802.11b, 22 dbm 230 ma i cq idle current for 802.11g to meet evm <2.5% @ 19 dbm 70 ma i off shut down current 0.1 a v reg reference voltage for, with 110 ? resistor 2.7 5 2.8 5 2.95 v t3.0 75033 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 6 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company table 4: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 2400 2485 mhz p out output power @ pin = -6 dbm 11b signals 22 dbm @ pin = -7 dbm 11g signals 21 dbm g small signal gain 28 29 db g var1 gain variation over band (2400~2485 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 22 dbm meet 11g ofdm 54 mbps spectrum mask 22 dbm added evm @ 19 dbm output with 11g ofdm 54 mbps signal 2.5 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -40 dbc t4.2 75033 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 7 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, unless otherwise specified figure 3: s-parameters 1321 f3.0 s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s11 (db) s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s12 (db) s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s21 (db) s22 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s22 (db) downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 8 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802.11g ofdm signal figure 4: emv versus output power figure 5: power gain versus output power evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 101112131415161718192021222324 output power (dbm) evm (%) freq=2.412 ghz freq=2.442 ghz freq=2.484 ghz 1321 f4.0 power gain versus output power 20 22 24 26 28 30 32 34 36 38 40 9 101112131415161718192021222324 output power (dbm) power gain (db) freq=2.412 ghz freq=2.442 ghz freq=2.484 ghz 1321 f5 0 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 9 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company figure 6: total current consumption for 802.11g operation versus output power figure 7: pae versus output power supply current versus output power 80 100 120 140 160 180 200 220 240 260 280 9 101112131415161718192021222324 output power (dbm) supply current (ma) freq=2.412 ghz freq=2.442 ghz freq=2.484 ghz 1321 f6.0 pae versus output power 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 9 101112131415161718192021222324 output power (dbm) pae (%) freq=2.412 ghz freq=2.442 ghz freq=2.484 ghz 1321 f7.0 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 10 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company figure 8: 802.11g spectrum mask at 22 dbm figure 9: detector characteristics over temperature and over frequency -70 -60 -50 -40 -30 -20 -10 0 10 2.3 5 2.4 0 2 .45 2 .50 2 .5 5 freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz frequency (ghz) 1321 f8.0 amplitude (db) detector voltage versus output power 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 output power (dbm) detector voltage (v) freq = 2.412 ghz (25c) freq = 2.442 ghz (25c) freq = 2.484 ghz (25c) freq = 2.412 ghz (0c) freq = 2.442 ghz (0c) freq = 2.484 ghz (0c) freq = 2.412 ghz (85c) freq = 2.442 ghz (85c) freq = 2.484 ghz (85c) 1321 f9.1 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 11 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company figure 10: ch7 detector characteristics over temperature with 2:1 output vswr all phases test conditions: v cc = 3.3v, t a = 25c, 1 mbps 802.11b cck signal figure 11: 802.11b spectrum mask at 22 dbm detector voltage versus output power 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 output power (dbm) detector voltage (v) freq = 2.442 ghz (0c) freq = 2.442 ghz (25c) freq = 2.442 ghz (85c) freq = 2.442 ghz (max) freq = 2.442 ghz (min) 1321 f10.1 -80 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2. 40 2.45 2. 50 2.55 freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz frequency (ghz) amplitude (db) 1321 f11.0 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 12 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company figure 12: typical schematic for high-power/high-efficiency 802.11b/g applications 50 / 0?20 mil rf out 47 pf 2.0 pf 50 / 60?70 mil rf in 10 f 22 pf v cc 6.8 nh 0.1 f det 10 pf 1321 schematic 1.1 suggested operation conditions: 1. v cc = 3.3v 2. center slug to rf ground 3. vreg = 2.85v with r1=110 suggested for robustness under input overdrive condition when working with some transceivers. 47pf 0.1 f r2=50 2 56 8 16 15 1 14 49 11 1210 13 3 bias circuit 7 0.1 f r1 = 110 vreg 1.5 nh downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 13 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company product ordering information valid combinations for sst12lp07 sst12lp07 -qvce sst12lp07 evaluation kits sst12lp07 -qvce-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 12 lp 07 - qvce xx xx xx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qv = vqfn product family identifier product type p = power amplifier voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf product 1. environmental suffix ?e? denotes non-pb sol- der. sst non-pb solder devices are ?rohs compliant?. downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 14 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company packaging diagrams figure 13: 16-contact very-thin quad flat no-lead (vqfn) sst package code: qvc note: 1. complies with jedec jep95 mo-220j, variant veed-4 except external paddle nominal dimensions. 2. from the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-vqfn-3x3-qvc-2.0 1.7 0.5 bsc see notes 2 and 3 pin 1 0.300.18 0.075 1.7 0.2 0.05 max 0.450.35 1.000.80 pin 1 top view bottom view side view 1mm 3.00 0.075 3.00 0.075 downloaded from: http:///
?2011 silicon storage technology, inc. ds75033a 10/11 15 2.4 ghz high-power, high-gain power amplifier sst12lp07 data sheet a microchip technology company table 5: revision history revision description date 00 ? initial release of data sheet may 2006 01 ? updated document status from preliminary specifications to data sheet mar 2008 02 ? updated ?contact information? on page 14 mar 2009 a ? applied new document format ? released document under letter revision system ? updated spec number from s71321 to ds75033 oct 2011 ? 2011 silicon storage technology, inc?a microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-61341-701-0 downloaded from: http:///

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